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VISHAY
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, With Base Connection
Single Channel
Features
* * * * AC or Polarity Insensitive Input Built-in Reverse Polarity Input Protection Improved CTR Symmetry Industry Standard DIP Package
A/C 1 C/A 2 NC 3 Dual Channel A A C
i179024
6B 5C 4E
Agency Approvals
* UL File #E52744 System Code H or J * CSA 93751 * BSI IEC60950 IEC60965 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
1 3 4
8E 7C 6C 5E
C2
Order Information
Part IL250 IL251 IL252 ILD250 ILD251 ILD252 IL250-X007 IL250-X009 IL251-X009 IL252-X007 IL252-X009 ILD250-X009 ILD251-X006 ILD251-X007 ILD251-X009 ILD252-X009 Remarks CTR > 50 %, Single Channel DIP-6 CTR > 20 %, Single Channel DIP-6 CTR > 100 %, Single Channel DIP-6 CTR > 50 %, Dual Channel DIP-8 CTR > 20 %, Dual Channel DIP-8 CTR > 100 %, Dual Channel DIP-8 CTR > 50 %, Single Channel SMD-6 (option 7) CTR > 50 %, Single Channel SMD-6 (option 9) CTR > 20 %, Single Channel SMD-6 (option 9) CTR > 100 %, Single Channel SMD-6 (option 7) CTR > 100 %, Single Channel SMD-6 (option 9) CTR > 50 %, Dual Channel SMD-6 (option 9) CTR > 20 %, Dual Channel DIP-8 400 mil (option 6) CTR > 20 %, Dual Channel SMD-6 (option 7) CTR > 20 %, Dual Channel SMD-6 (option 9) CTR > 100 %, Dual Channel SMD-6 (option 9)
Applications
Ideal for AC signal detection and monitoring.
Description
The IL250/ 251/ 252/ ILD250/ 251/ 252 are bidirectional input optically coupled isolators consisting of two Gallium Arsenide infrared LEDs coupled to a silicon NPN phototransistor per channel. The IL250/ ILD/250 has a minimum CTR of 50 %, the IL251/ ILD251 has a minimum CTR of 20 %, and the IL252/ ILD252 has a minimum CTR of 100 %. The IL250/ IL251/ IL252 are single channel optocouplers. The ILD250/ ILD251/ ILD252 has two isolated channels in a single DIP package.
For additional information on the available options refer to Option Information.
Document Number 83618 Rev. 1.3, 20-Apr-04
www.vishay.com 1
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol IF Pdiss Value 60 100 1.33 Unit mA mW mw/C
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Power dissipation single channel Power dissipation dual channel Derate linearly from 25 C single channel Derate linearly from 25 C dual channel Test condition Symbol BVCEO BVEBO BVCBO Pdiss Pdiss Value 30 5.0 70 200 150 2.6 2.0 Unit V V V mW mW mW/C mW/C
Coupler
Parameter Isolation test voltage (between emitter and detector referred to standard climate 23 C/50 %RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total dissipation single channel Total dissipation dual channel Derate linearly from 25 C single channel Derate linearly from 25 C dual channel Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb RIO RIO Ptot Ptot Test condition Symbol VISO Value 5300 Unit VRMS
7.0 7.0 10
12
mm mm mW mW mW/C mW/C C C sec.
1011 250 400 3.3 5.3 - 55 to + 150 - 55 to + 100 10
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Document Number 83618 Rev. 1.3, 20-Apr-04
VISHAY
Electrical Characteristics
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Test condition IF = 10 mA Symbol VF Min Typ. 1.2 Max 1.5 Unit V
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA IE = 100 A IC = 10 A VCE = 10 V Symbol BVCEO BVEBO BVCBO ICEO Min 30 7.0 70 Typ. 50 10 90 5.0 50 Max Unit V V V nA
Coupler
Parameter Collector-emitter saturation voltage Test condition IF = 16 mA, IC = 2.0 mA Symbol VCEsat Min Typ. Max 0.4 Unit V
Current Transfer Ratio
Parameter DC Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V Part ILD250 ILD251 ILD252 Symmetry (CTR @ + 10 mA)/ (CTR @ -10 mA) Symbol CTRDC CTRDC CTRDC Min 50 20 100 0.50 1.0 2.0 Typ. Max Unit % % %
Typical Characteristics (Tamb = 25 C unless otherwise specified)
60
IF - LED Forward Current - mA NCTR - Normalized CTR
1.5
40 -55C 20 25C 0 -20 -40 -60 -1.5 85C
1.0
Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V
0.5 NCTR(SAT) NCTR 0.0
-1.0
-0.5
0.0
0.5
1.0
1.5
.1
iil250_02
1
10
100
VF - LED Forward Voltage - V
iil250_01
I F - LED Current - mA
Fig. 1 LED Forward Current vs.Forward Voltage
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Current
Document Number 83618 Rev. 1.3, 20-Apr-04
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IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
1.5
ICE - Collector Current - mA NCTR - Normalized CTR
Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C
35 30 25 20 15 10 5 0 25C 85C 70C 50C
0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA
0
iil250_06
10
20
30
40
50
60
iil250_03
IF - LED Current - mA
Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED Current
Fig. 6 Collector-Emitter Current vs. Temperature and LED Current
1.5
NCTR - Normalized CTR ICEO - Collector-Emitter - nA
10 5 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 VCE = 10 V TYPICAL
1.0 CTRce(sat) VCE = 0.4 V TA= 70C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 I F - LED Current - mA 100
iil250_04
iil250_07
TA - Ambient Temperature - C
Fig. 4 Normalized Non-saturated and saturated CTR vs. LED Current
Fig. 7 Collector-Emitter Leakage Current vs.Temp.
1.5
NCTRcb - Normalized CTRcb NCTR - Normalized CTR
1.5 Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V Normalized to: IF =10 mA VCB = 9.3 V TA = 25C
1.0
TA = 85C
1.0
0.5 NCTR(SAT) NCTR .1 1 10 IF - LED Current - mA 100
0.5 25C 50C 70C 0.0 .1 1 10 100 IF - LED Current - mA
0.0
iil250_05
iil250_08
Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Current
Fig. 8 Normalized CTRcb vs. LED Current and Temperature
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Document Number 83618 Rev. 1.3, 20-Apr-04
VISHAY
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
1000 TA = 25C
ICB - Collector Base Photocurrent - A
1.5
NHFE(sat) -Normalized Saturated HFE
70C 50C 25C
100 10 1 .1 .01 .1
iil250_09
ICB = 1.0357 *IF ^1.3631
1.0
-20C
Normalized to: VCE = 10 V I B = 20 A TA = 25C
0.5 V CE = 0.4 V 0.0 1 10 100 1000 I B - Base Current - (A)
1 10 IF - LED Current - mA
100
iil250_12
Fig. 9 Collector-Base Photocurrent vs. LED Current
Fig. 12 Normalized Saturated HFE vs. Base Current and Temperature
10
tpLH - Propagation Delay s
Normalized Photocurrent
1
100
2.0
.1
NIB-TA = -20C NIb, TA = 25C NIb, TA = 50C NIb, TA = 70C
10 tpLH 1
1.5
1.0 .1 1 10 100 RL - Collector Load Resistor - k
.01 .1
iil250_10
1
10
100
iil250_13
F I - LED Current - mA
Fig. 10 Normalized Photocurrent vs. IF and Temp.
Fig. 13 Propagation Delay vs. Collector Load Resistor
1.2
NHFE - Normalized HFE
70C 50C 25C -20C
1.0
Normalized to: I B= 20 A VCE = 10 V TA = 25C
IF
0.8 VO 0.6
tD tR tPLH VTH = 1.5 V
0.4 1
iil250_11
tPHL 10 100 1000
iil250_14
tS
tF
IB - Base Current - A
Fig. 11 Normalized Non-saturated HFE vs. Base Current and Temperature
Fig. 14 Switching Timing
Document Number 83618 Rev. 1.3, 20-Apr-04
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tpHL - Propagation Delay s
Normalized to: IF = 10 mA, T = 25C
1000 TA = 25C, IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL
2.5
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
VCC = 5 V F=10 KHz, DF=50% RL
VO
IF=10 mA
iil250_15
Fig. 15 Switching Schematic
Package Dimensions in Inches (mm)
pin one ID
3 .248 (6.30) .256 (6.50) 4
2
1
5
6
ISO Method A
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
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Document Number 83618 Rev. 1.3, 20-Apr-04
VISHAY
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
.020 (.51 ) .035 (.89 ) .100 (2.54) typ.
10 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18450
Document Number 83618 Rev. 1.3, 20-Apr-04
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IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83618 Rev. 1.3, 20-Apr-04

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